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STP60NE06L-16 STP60NE06L-16FP
N - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FP STripFETTM POWER MOSFET
TYPE STP60NE06L-16 STP60NE06L-16FP
s s s s s s
V DSS 60 V 60 V
R DS(on) < 0.016 < 0.016
ID 60 A 35 A
TYPICAL RDS(on) = 0.014 AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE LOW THRESHOLD DRIVE
1
3 2
1 2
3
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (*) P tot V ISO dv/dt Ts tg Tj May 2000 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at T c = 25 oC Derating F actor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 60 42 240 150 1 6 -65 to 175 175
( 1) ISD 60 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX
Value STP60NE06L-16 STP60NE06L-16FP 60 60 15 35 24 140 45 0.3 2000
Un it V V V A A A W W /o C V V/ns
o o
C C 1/9
(*) Pulse width limited by safe operating area
STP60NE06L-16/FP
THERMAL DATA
TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.94 62.5 0.5 300 TO-220FP 2.7
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 25V) Max Value 60 400 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 60 1 10 100 Typ. Max. Unit V A A nA
V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 15 V
T c = 125 oC
ON ()
Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 5V V GS = 10V Test Con ditions ID = 250 A ID = 30 A ID = 30 A 60 Min. 1 Typ. 1.6 0.014 0.012 Max. 2.5 0.016 0.014 Unit V A
V DS > ID(o n) x R DS(on )ma x V GS = 10 V
DYNAMIC
Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D =30 A V GS = 0 Min. Typ. 30 4150 590 150 Max. Unit S pF pF pF
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STP60NE06L-16/FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 30 V I D = 30 A R G = 4.7 V GS = 5 V (Resistive Load, see fig. 3) V DD = 40 V I D = 60 A VGS = 5 V Min. Typ. 50 155 55 15 30 70 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbo l t d(of f) tf tr (Voff) tf tc Parameter Turn-off Delay T ime Fall T ime Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 30 V I D = 30 A V GS = 5 V R G =4.7 (Resistive Load, see fig. 3) V DD = 48 V I D = 20 A V GS = 5 V R G = 4.7 (Induct ive Load, see fig. 5) Min. Typ. 125 25 45 220 280 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE
Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A V GS = 0 85 300 7 I SD = 60 A di/dt = 100 A/s T J = 150 o C V DD = 30 V (see test circuit, fig. 5) Test Con ditions Min. Typ. Max. 60 240 1.5 Unit A A V ns C A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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STP60NE06L-16/FP
Thermal Impedance for TO-220 Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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STP60NE06L-16/FP
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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STP60NE06L-16/FP
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STP60NE06L-16/FP
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
E
mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
A
C
D1
L2 F1
D
G1
Dia. F2 F
L5 L7 L6
L9
L4
G
H2
P011C
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STP60NE06L-16/FP
TO-220FP MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7 F1 F
D
G1
E
H
F2
123 L2 L4
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G
STP60NE06L-16/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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